Home › Ceramic Microstrip Lines › TL-B Thin-Film Microstrip Line on Alumina, 1–110 GHz, Same-side double bend
TL-B Thin-Film Microstrip Line on Alumina, 1–110 GHz, Same-side double bend
$15.00 USD
Thin-film microstrip line (Same-side double bend) on alumina (Al₂O₃), 1–110 GHz, 50 Ω reference. Top Au signal trace with a continuous backside Au ground plane for RF interconnect. Substrate 5 × 0.7 mm, line width 176 µm, 4 µm Au metalization. Measured S11 characteristics across 1–110 GHz are listed in the datasheet.
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Specifications
| Transmission Line Type | Microstrip, Same-side double bend |
|---|---|
| Frequency Range | 1–110 GHz |
| Reference Impedance | 50 Ω |
| Substrate | Alumina (Al₂O₃), 5 × 0.7 mm |
| Line Width (w) | 176 µm |
| Substrate Thickness (h₀) | 200 µm |
| Relative Permittivity | 9.8 |
| Dielectric Loss Tangent | 0.0003 |
| Metalization | Au / Au, 4 µm |
| S11 max. 1–10 GHz | -17.07 dB @ 6.450 GHz |
| S11 max. 10–40 GHz | -20.18 dB @ 10.265 GHz |
| S11 max. 40–67 GHz | -23.89 dB @ 62.040 GHz |
| S11 max. 67–110 GHz | -19.95 dB @ 105.912 GHz |
| S11 max. 1–110 GHz | -17.07 dB @ 6.450 GHz |
Applications
- RF / mmWave Interconnect
- Module Feedlines
- Test Fixtures
- Impedance Reference Structures
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